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MSM8128VLM-10 参数 Datasheet PDF下载

MSM8128VLM-10图片预览
型号: MSM8128VLM-10
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 SRAM [128K x 8 SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 10 页 / 585 K
品牌: MOSAIC [ MOSAIC ]
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MSM8128 - 70/85/10/12
Issue 4.5 : April 2001
Read Cycle Timing Waveform
(1,2 )
t
RC
Address
t
AA
OE
t
OE
t
OLZ
t
CLZ1
t
ACS1 (2)
t
CHZ1 (3)
t
OH
CS1
CS2
t
ACS2 (2)
t
CLZ2
t
OHZ (3)
Dout
Data Valid
t
CHZ2 (3)
Notes:
(1) WE is High for Read Cycle.
(2) Address valid prior to or coincident with CS1 transition low or CS2 high.
(3) t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
referenced to output voltage levels. At any given temperature and voltage condition, t
CHZ
max is less than
t
CLZ
min both for a given device and from device to device. This parameter is sampled and not 100% tested.
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