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MSM8128VM-12 参数 Datasheet PDF下载

MSM8128VM-12图片预览
型号: MSM8128VM-12
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 SRAM [128K x 8 SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 10 页 / 585 K
品牌: MOSAIC [ MOSAIC ]
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MSM8128-70/85/10/12  
Issue 4.5 : April 2001  
Low VCC Data Retention Timing Waveform 1 (CS1 controlled)  
Vcc  
DATA RETENTION MODE  
4.5V  
4.5V  
2.2V  
tCDR  
tR  
2.2V  
VDR  
CS1Vcc-0.2V  
CS1  
0V  
Low VCC Data Retention Timing Waveform 2 (CS2 controlled)  
Vcc  
DATA RETENTION MODE  
4.5V  
4.5V  
tCDR  
t R  
CS2  
VDR2  
0.4V  
CS2 0.2V  
0V  
AC Characteristics Notes  
(1) A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among  
CS1 going low, CS2 going high and WE going low. A write ends at the earliest transition among CS1 going high, CS2  
going low and WE going high. tWP is measured from the beginning of write to the end of write.  
(2) tWR is measured from the earlier of CS1 or WE going high or CS2 going high to the end of write cycle.  
(3) During this period, I/O pins are in the output state. Input signals out of phase must not be applied.  
(4) If CS1 goes low simultaneously with WE going low or after WE going low, outputs remain in high impedance state.  
(5) OE is continuously low. (OE=VIL)  
(6) Dout is in the same phase as written data of this write cycle.  
(7) Dout is the read data of next address.  
(8) If CS1 is low and CS2 is high during this period, I/O pins are in the output state. Input signals out of phase must not be  
applied to I/O pins.  
(9) tWHZ is defined as the time at which the outputs achieve the open circuit conditions and is not referenced to output voltage  
levels. These parameters are sampled and not 100% tested.  
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