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MSM8128SXM-10 参数 Datasheet PDF下载

MSM8128SXM-10图片预览
型号: MSM8128SXM-10
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 100ns, CMOS, CDIP32, DIP-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 10 页 / 299 K
品牌: MOSAIC [ MOSAIC ]
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MSM8128-70/85/10/12  
Issue 4.4 : February 2000  
Alternate Pin Definition  
NC  
A16  
A14  
A12  
A7  
1
2
3
4
5
32  
31  
30  
29  
28  
27  
26  
VCC  
A15  
NC  
WE  
A13  
A8  
A6  
A5  
6
7
A9  
A4  
A3  
A2  
A1  
A0  
D0  
D1  
D2  
8
9
TOP VIEW 25  
A11  
OE  
A10  
CS  
D7  
D6  
D5  
D4  
D3  
VX,SX  
24  
23  
22  
21  
20  
19  
18  
17  
10  
11  
12  
13  
14  
15  
16  
GND  
Military Screening Procedure  
Component Screening Flow for high reliability product is in accordance with Mil-883 method 5004  
MB COMPONENT SCREENING FLOW  
SCREEN  
TEST METHOD  
LEVEL  
Visual and Mechanical  
Internal visual  
2010 Condition B or manufacturers equivalent  
1010 Condition C (10 Cycles,-65oC to +150oC)  
2001 Condition E (Y, only) (30,000g)  
100%  
100%  
100%  
100%  
100%  
Temperature cycle  
Constant acceleration  
Pre-Burn-in electrical  
Burn-in  
Per applicable device specifications at TA=+25oC  
Method 1015,Condition D,TA=+125oC,160hrs min  
Final Electrical Tests  
Per applicable Device Specification  
Static (dc)  
a) @ TA=+25oC and power supply extremes  
b) @ temperature and power supply extremes  
100%  
100%  
Functional  
a) @ TA=+25oC and power supply extremes  
b) @ temperature and power supply extremes  
100%  
100%  
Switching (ac)  
a) @ TA=+25oC and power supply extremes  
b) @ temperature and power supply extremes  
100%  
100%  
Percent Defective allowable (PDA)  
Hermeticity  
Calculated at post-burn-in at TA=+25oC  
1014  
5%  
Fine  
Gross  
Condition A  
Condition C  
100%  
100%  
External Visual  
2009 Per vendor or customer specification  
100%