1M x 8 Static RAM
MSM81000B - 020
Issue 5.0 December 1999
Description
The MSM81000B is a 1M x 8 SRAM monolithic
device available in Chip Size BGA (Ball Grid Array)
package, with access times of 20ns. The device is
available to commercial and industrial temperature
grades.
The Chip Size BGA provides an ultra high density
memory packaging solution.
The Chip Size BGA occupies less than 50% of the
board area of conventional SOP, SOJ and TSOP II
packages.
Block Diagram
/CS
/OE
/WE
A0
A1
A2
A3
A4
A5
A6
A7
A8
1M x 8
SRAM
D0
D1
D2
D3
D4
D5
D6
D7
Features
Access times of 20 ns.
5V + 10%
Commercial & Industrial temperature grades
Chip Size BGA.
48 pad, 1mm pad pitch, package.
Eutectic 63/67 solder ball attach.
Low Power Dissipation.
Operating
2 W (max)
Standby (CMOS) 140mW (max)
Completely Static Operation.
4 layer BT substrate with power and ground planes.
Outline, dimensions and pinout will remain the
same in the event of a die shrink.
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
Pin Definition
See page 2.
Pin Functions
Description
Address Input
Data Input/Output
Chip Select
Signal
A0~A19
D0~D7
/CS
/WE
/OE
NC
VCC
GND
Package Details
48D - 48 Ball, 1mm pitch Chip Size BGA
Max. Dimensions (mm) - 13.00 x 11.00 x 1.50
Write Enable
Output Enable
No Connect
Power
Ground
MOSAIC [ MOSAIC ]
