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MFM8126VI-70 参数 Datasheet PDF下载

MFM8126VI-70图片预览
型号: MFM8126VI-70
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128KX8, 70ns, CDXA32, 0.100 INCH, CERAMIC, VIL-32]
分类和应用: 内存集成电路
文件页数/大小: 27 页 / 326 K
品牌: MOSAIC [ MOSAIC ]
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MFM8126S-70/90/12  
ISSUE4.2:November1998  
Sector Erase  
Sector erase is a six bus cycle operation. There are two "unlock"write cycles. These are followed by writing the  
"Set-up" command. Two more "unlock" write cycles are then followed by the sector erase command. The sector  
address (any address location within the desired sector) is latched on the falling edge of WE, while the com-  
mand (data) is latched on the rising edge of WE. A time-out of 80µs from the rising edge of the last sector erase  
command will initiate the sector erase command(s).  
Multiple sectors may be erased concurrently by writing the six bus cycle operations as desribed above. This  
sequence is followed with writes of the sector erase command (30H) to addresses in other sectors required to  
be concurrently erased. The time between writes must be less than 80µs, otherwise that command will not be  
accepted. It is recommended that processor interrupts be disabled during this time to guarantee this condition.  
The interrupts can be re-enabled after the last Sector Erase command(s). If another falling edge of WE occurs  
within the 80µs time-out window , the timer is reset.(D3 indicates if the timer window is still open). Loading the  
sector erase buffer may be done in any sequence and with any number of sectors (0 to 7). Any command other  
than Sector Erase during this period will reset the device to read mode, ignoring the previous.  
Sector erase doesn't require the user to program the device prior to erase. The device automatically programs all  
memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the  
remaining unselected sectors are not affected. The system is not required to provide any controls or timings  
duringtheseoperations.  
The automatic sector erase begins after the 100µs time-out from the rising edge of the WE pulse for the last  
sector erase command pulse and terminates when the data on D7 is "1" ( see Write Operation Status Section)  
at which time the device returns to read mode. Data polling must be preformed at an address within any of the  
sectors being erased.  
Write Operations Status  
Hardware Sequence Flags  
STATUS  
D7  
D6  
D5  
D3  
D2-D0  
Auto-Programming  
InProgress Programminginautoerase  
D7  
Toggle  
Toggle  
0
0
0
1
0
Reservedfor  
futureuse  
Erasing in Auto Erase  
Auto-Programming  
0
Toggle  
Toggle  
0
1
1
0
D7  
Exceeded Programminginautoerase  
Time limits Erasing in Auto-Erase  
0
0
Toggle  
Toggle  
1
1
1
1
Reservedfor  
futureuse  
Data Polling - D7  
The MFM8126 features Data Polling as a method to indicate to the host system that the Embedded Algorithms  
are in progress or completed.  
During the Embedded Programming Algorithm, an attempt to read the device will produce complement data of  
the data last written to D7. Upon completion of the Embedded Programming Algorithm an attempt to read the  
device will produce the true data last written to D7. Data Polling is valid after the rising edge of the forth WE  
pulse in the four write pulse sequence.  
During the Embedded Erase Algorithm, D7 will be "0" until the erase operation is completed. Upon completion  
data at D7 is "1". For chip erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six  
write pulse sequence. For sector erase, Data Polling is valid after the last rising edge of the sector erase WE  
pulse.  
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase  
Algorithm, or sector erase time-out.  
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