MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VGG
Pin
Drain Voltage
Gate Voltage
Input Power
Output Power
VGG<5V
17
V
V
VDD<12.5V, Pin=0mW
6
100
mW
W
f=440-520MHz,
ZG=ZL=50W
Pout
45
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
Above Parameters are guaranteed independently
-30 to +110
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50W, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
Input VSWR
440
30
520
MHz
W
Pout
hT
40
%
VDD=12.5V,
VGG=5V,
2fo
r in
-25
3:1
dBc
—
Pin=50mW
IGG
Gate Current
1
mA
VDD=10.0-15.2V, Pin=25-70mW,
—
—
Stability
No parasitic oscillation
—
—
Pout<40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR Tolerance
No degradation or destroy
Load VSWR=20:1
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H4452M
2 Dec 2002
MITSUBISHI ELECTRIC
2/9
MITSUBISHI [ Mitsubishi Group ]
