ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M0608M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
=0V, P
in
=0W
V
GG
<5V
V
DD
<7.2V, P
in
<30mW
f=66-88MHz,
Z
G
=Z
L
=50Ω
RATING
12
9.2
5.5
50
10
-30 to +90
-40 to +110
UNIT
V
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=7.2V,V
GG
=5V, P
in
=30mW
P
out
=6W (V
GG
control),
V
DD
=7.2V,
P
in
=30mW
MIN
66
7
45
TYP
MAX
88
UNIT
MHz
W
%
Harmonic
-18
4:1
1
dBc
—
mA
—
—
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=6.0-9.2V, P
in
=15-50mW, P
out
<8W (V
GG
control),
I
DD
<3A, Load VSWR=4:1
V
DD
=9.2V, P
in
=30mW, P
out
=7W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
NOTE1: All parameters, conditions, ratings, and limits are subject to change without notice.
NOTE2: This device may be destroyed in a few minutes when output power from module is more than 10W.
Therefore, please keep the output power of device less than 10W even operating under the
high load VSWR conditions.
RA07M0608M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
