MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
160
140
120
100
80
3
2
Tj=125°C
t
s
101
7
I
B2=–1A
V
CC=300V
B1=1A
=50A
I
I
5
IB2=–3A
C
4
I
B2=–5A
3
2
I
B2=–10A
60
t
f
100
7
40
T
j
=25°C
20
5
4
3
Tj=125°C
0
10 –1
2
3 4 5 7 100
2
3 4 5 7 101
0
200
400
600
800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
102
100
SECOND
BREAKDOWN
AREA
7
5
90
80
70
60
50
40
30
20
10
0
3
2
101
7
5
3
2
100
7
5
COLLECTOR
DISSIPATION
3
T
C
=25°C
2
NON–REPETITIVE
10 –1
100
101
102 103
2 345 7
0
20 40 60 80 100 120 140 160
2 345 7
2 345 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100 2 3 45 7101 2 3 45
CHARACTERISTICS) (TYPICAL)
102
7
0.5
5
0.4
0.3
0.2
4
3
2
101
7
5
4
3
2
0.1
0
T
T
j
=25°C
j=125°C
100
10 –3
10 –2
10 –1 100
2 3 45 7
0.4
0.8
1.2
1.6
2.0
2.4
2 3 45 7
2 3 45 7
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI [ Mitsubishi Group ]
