MITSUBISHI TRANSISTOR MODULES
QM15TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
50
T
j
=25°C
COLLECTOR CURRENT I
C
(A)
40
DC CURRENT GAIN h
FE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
0
V
CE
=2.8V
2
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
30
I
B
=0.4A
I
B
=0.2A
I
B
=0.1A
I
B
=0.06A
V
CE
=5.0V
20
10
I
B
=0.02A
0
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
COLLECTOR CURRENT I
C
(A)
0
1
2
3
4
5
V
CE
(V)
COLLECTOR-EMITTER VOLTAGE
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
1.8
2.2
2.6
3.0
3.4
V
BE
(V)
3.8
V
CE
=2.8V
T
j
=25°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
BASE CURRENT I
B
(A)
V
BE(sat)
10
0
V
CE(sat)
7
5
4
3
I
B
=0.3A
2
T
j
=25°C
10
–1
10
0
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
t
on
, t
s
, t
f
(µs)
2
10
1
7
5
4
3
2
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
4
t
s
3
2
I
C
=10A I
C
=15A
1
I
C
=5A
T
j
=25°C
T
j
=125°C
0
3 4 5 7 10
–2
2 3 4 5 7 10
–1
2 3
SWITCHING TIME
10
0
7
5
4
3
2
10
0
t
f
t
on
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=–I
B2
=0.3A
2 3 4 5 7 10
2
I
C
(A)
2 3 4 5 7 10
1
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
