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M54523P 参数 Datasheet PDF下载

M54523P图片预览
型号: M54523P
PDF下载: 下载PDF文件 查看货源
内容描述: 7 -UNIT 500毫安达林顿晶体管阵列钳位二极管 [7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE]
分类和应用: 晶体二极管晶体管达林顿晶体管
文件页数/大小: 4 页 / 51 K
品牌: MITSUBISHI [ Mitsubishi Group ]
 浏览型号M54523P的Datasheet PDF文件第1页浏览型号M54523P的Datasheet PDF文件第3页浏览型号M54523P的Datasheet PDF文件第4页  
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>  
M54523P/FP  
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE  
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)  
Limits  
typ  
Symbol  
VO  
Parameter  
Unit  
V
min  
0
max  
50  
Output voltage  
Duty Cycle  
Collector current  
(Current per 1 cir-  
cuit when 7 circuits  
are coming on si-  
multaneously)  
P : no more than 8%  
FP : no more than 8%  
0
0
400  
200  
mA  
IC  
Duty Cycle  
P : no more than 30%  
FP : no more than 25%  
25  
25  
IC 400mA  
IC 200mA  
3.85  
3.4  
0
“H” input voltage  
“L” input voltage  
VIH  
VIL  
V
V
0.6  
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)  
Symbol Parameter Test conditions  
Limits  
typ*  
Unit  
V
min  
50  
max  
V
(BR) CEO Collector-emitter breakdown voltage ICEO = 100µA  
1.2  
2.4  
1.6  
1.8  
18  
VI = 3.85V, IC = 400mA  
VCE(sat)  
II  
Collector-emitter saturation voltage  
Input current  
V
1.0  
VI = 3.4V, IC = 200mA  
VI = 3.85V  
1.2  
mA  
VI = 25V  
9.5  
VF  
IR  
Clamping diode forward volltage  
Clamping diode reverse current  
DC amplification factor  
IF = 400mA  
1.4  
2.4  
100  
V
VR = 50V  
µA  
hFE  
1000  
2500  
VCE = 4V, IC = 350mA, Ta = 25°C  
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained un-  
der any conditions.  
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
min  
typ  
10  
max  
ns  
ns  
ton  
toff  
Turn-on time  
Turn-off time  
CL = 15pF (note 1)  
120  
TIMING DIAGRAM  
NOTE 1 TEST CIRCUIT  
INPUT  
Vo  
INPUT  
50%  
50%  
Measured device  
RL  
OPEN  
OUTPUT  
PG  
OUTPUT  
50%  
ton  
50%  
CL  
50  
toff  
(1)Pulse generator (PG) characteristics : PRR=1kHz,  
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω  
VP  
= 3.85VP-P  
(2)Input-output conditions : R  
(3)Electrostatic capacity C includes floating capacitance  
at connections and input capacitance at probes  
L
= 25, Vo = 10V  
L
Jan.2000  
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