MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
10
8
Tch = 25°C
= 5A
V
GS = 0V
I
D
Pulse Test
TC = 125°C
6
75°C
25°C
V
400V
600V
DS = 250V
4
4
2
0
0
0
10
20
30
40
(nC)
50
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
VDS = 10V
V
GS = 10V
= 1/2I
Pulse Test
I
D = 1mA
I
D
D
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
VGS = 0V
D = 1.0
I
D = 1mA
5
3
2
0.5
0.2
0.1
100
7
5
3
2
P
DM
0.05
0.02
0.01
Single Pulse
10–1
7
tw
T
5
3
2
tw
D
=
T
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
MITSUBISHI [ Mitsubishi Group ]
