MITSUBISHI IGBT MODULES
CM300DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T = 25 °C unless otherwise specified
j
Ratings
Symbol
CM300DY-28H
–40 to 150
–40 to 125
1400
Units
°C
Junction Temperature
T
j
Storage Temperature
T
stg
°C
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
V
Volts
CES
GES
V
±20
Volts
Collector Current (T = 25°C)
I
300
Amperes
Amperes
Amperes
Amperes
Watts
N · m
C
C
Peak Collector Current
I
600*
CM
Emitter Current** (T = 25°C)
I
300
C
E
Peak Emitter Current**
I
600*
EM
Maximum Collector Dissipation (T = 25°C, T ≤ 150°C)
P
c
2100
C
j
Mounting Torque, M6 Main Terminal
–
1.96 ~ 2.94
1.96 ~ 2.94
500
Mounting Torque, M6 Mounting
Weight
–
–
N · m
Grams
Vrms
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
2500
iso
*Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T
j
rating.
j(max)
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
Typ.
–
Max.
1.0
0.5
8.0
4.2**
–
Units
mA
Collector-Cutoff Current
Gate Leakage Current
I
V
V
= V
, V
CES GE
= 0V
= 0V
–
–
CES
CE
I
= V
, V
GES CE
–
µA
GES
GE
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
I
= 30mA, V
= 10V
= 15V
5.0
–
6.5
3.1
2.95
1530
–
Volts
Volts
Volts
nC
GE(th)
C
CE
GE
V
I = 300A, V
C
CE(sat)
I
= 300A, V
GE
= 15V, T = 150°C
–
C
j
Total Gate Charge
Q
V
= 800V, I = 300A, V
GE
= 15V
–
–
G
CC
C
Emitter-Collector Voltage
V
I
= 300A, V
E GE
= 0V
–
3.8
Volts
EC
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
60
Units
nF
nF
nF
ns
Input Capacitance
C
ies
Output Capacitance
Reverse Transfer Capacitance
C
V
= 0V, V
GE CE
= 10V
–
–
21
oes
C
res
–
–
12
Resistive
Load
Turn-on Delay Time
t
–
–
250
500
350
500
300
–
d(on)
Rise Time
t
V
= 800V, I = 300A,
–
–
ns
r
CC
C
Switching
Times
Turn-off Delay Time
Fall Time
t
V
= V
= 15V, R = 1.0Ω
–
–
ns
d(off)
GE1
GE2
G
t
f
–
–
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
I
I
= 300A, di /dt = –600A/µs
–
–
ns
rr
E
E
Q
rr
= 300A, di /dt = –600A/µs
–
3.0
µC
E
E
Thermal and Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
Typ.
–
Max.
0.06
0.12
0.035
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R
R
R
Per IGBT
–
th(j-c)
th(j-c)
th(c-f)
Per FWDi
–
–
Per Module, Thermal Grease Applied
–
–
Sep.1998
MITSUBISHI [ Mitsubishi Group ]
