MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
10
3
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
IGBT part:
5
Per unit base = R
th(j–c)
= 0.16°C/ W
3
FWDi part:
2
Per unit base = R
th(j–c)
= 0.24°C/ W
10
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
10
2
7
5
3
2
t
rr
I
rr
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 2.1Ω
T
j
= 25°C
2
3
5 7
10
2
2
3
5 7
10
3
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
Single Pulse
T
C
= 25°C
10
–2
10
1 1
10
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TMIE (s)
EMITTER CURRENT I
E
(A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
18
16
14
12
10
8
6
4
2
0
0
I
C
= 300A
V
CC
= 200V
V
CC
= 300V
500
1000
1500
2000
2500
GATE CHARGE Q
G
(nC)
Aug. 1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
