MITSUBISHI IGBT MODULES
CM20TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
V
GE
= 20V
COLLECTOR CURRENT, I
C
, (AMPERES)
40
15
12
11
COLLECTOR CURRENT, I
C
, (AMPERES)
EMITTER CURRENT, I
E
, (AMPERES)
32
T
j
= 25°C
32
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
10
2
7 T
j
= 25°C
5
3
2
10
1
7
5
3
2
10
0
1.0
24
10
24
16
16
8
7
9
8
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
1.5
2.0
2.5
3.0
3.5
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
CAPACITANCE VS. V
CE
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
1
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
5
C
ies
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
4
8
I
C
= 40A
10
0
C
oes
3
6
I
C
= 20A
2
4
10
-1
C
res
1
2
I
C
= 8A
V
GE
= 0V
10
0
10
-1
10
0
10
1
10
2
0
0
8
16
24
32
40
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
t
d(off)
t
f
SWITCHING TIME, (ns)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
di/dt = -40A/µsec
T
j
= 25°C
10
1
20
I
C
= 20A
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
16
V
CC
= 400V
V
CC
= 600V
I
rr
12
10
2
t
r
t
d(on)
V
CC
= 600V
V
GE
= ±15V
R
G
= 16Ω
T
j
= 125°C
10
2
t
rr
10
0
8
4
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
-1
10
2
0
0
40
80
120
160
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
