MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Conditions
Ratings
250
±20
200
400
200
400
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
(Note 2)
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
I
CES
V
GE(th)
I
GES
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 20mA, V
CE
= 10V
Min.
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
4.0
—
1.2
1.1
—
—
—
1500
—
—
—
—
—
10.0
—
—
—
0.09
—
Max.
1
5.0
0.5
1.7
—
55
3.5
1.9
—
600
300
900
500
250
—
2.0
0.21
0.47
—
0.16
Unit
mA
V
µA
V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25°C
I
C
= 200A, V
GE
= 10V
V
CE(sat)
Collector to emitter saturation voltage
T
j
= 125°C
Input capacitance
C
ies
V
CE
= 10V
Output capacitance
C
oes
V
GE
= 0V
Reverse transfer capacitance
C
res
Q
G
Total gate charge
V
CC
= 100V, I
C
= 200A, V
GE
= 10V
Turn-on delay time
t
d(on)
Turn-on rise time
t
r
V
CC
= 100V, I
C
= 200A
Turn-off delay time
t
d(off)
V
GE1
= V
GE2
= 10V
t
f
Turn-off fall time
R
G
= 13Ω, Inductive load switching operation
t
rr (Note 1)
Reverse recovery time
I
E
= 200A
Q
rr (Note 1)
Reverse recovery charge
V
EC(Note 1)
Emitter-collector voltage
I
E
= 200A, V
GE
= 0V
R
th(j-c)
Q
IGBT part (1/6 module)
Thermal resistance
*1
R
th(j-c)
R
FWDi part (1/6 module)
Contact thermal resistance
R
th(c-f)
Case to fin, Thermal compoundapplied
*2
(1/6 module)
*3
Thermal resistance
R
th(j-c’)
Q
Tc measured point is just under the chips
nF
nC
ns
ns
µC
V
°C/W
Note 1. I
E
, V
EC
, t
rr
, Q
rr
and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Sep. 2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
