MITSUBISHI IGBT MODULES
CM150DY-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
300
250
V
GE
=
20V
12
4
15
13
T
j
= 25°C
V
GE
= 15V
3
200
150
100
11
2
10
50
9
0
0
2
4
6
8
10
1
T
j
= 25°C
T
j
= 125°C
0
0
50
100
150
200
250
300
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
7
10
T
j
= 25°C
EMITTER CURRENT I
E
(A)
8
5
3
2
6
10
2
7
5
3
2
4
I
C
= 150A
I
C
= 300A
I
C
= 60A
2
T
j
= 25°C
T
j
= 125°C
0
1
2
3
4
5
0
6
8
10
12
14
16
18
20
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
C
ies
SWITCHING TIME (ns)
7
5
3
2
t
f
t
d(off)
10
1
7
5
3
2
10
2
7
5
3
2
t
d(on)
t
r
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
C
oes
10
0
7
5
3
2
10
1
7
5
3
2
C
res
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Feb.
2009
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
