MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS
INVERTER PART
Symbol
V
CES
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
T
j
T
stg
V
iso
—
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
(Tj = 25
°
C, unless otherwise specified)
Conditions
G-E Short
C-E Short
(Note. 1)
DC, T
C
= 91°C
Collector current
(Note. 4)
Pulse
(Note. 1, 5)
Maximum collector dissipation T
C
= 25°C
(Note. 1)
Emitter current
T
C
= 25°C
(Note. 4)
(Free wheeling diode forward current) Pulse
Junction temperature
Storage temperature
Isolation voltage
Terminals to base plate, f = 60Hz, AC 1 minute
(Note. 8)
Base plate flatness
On the centerilne X, Y
Torque strength
Main terminals
M6 screw
Torque strength
Mounting
M5 screw
Weight
(Typical)
Rating
1200
±20
150
300
960
150
300
–40 ~ +150
–40 ~ +125
2500
±0
~ +100
3.5 ~ 4.5
2.5 ~ 3.5
330
Unit
V
A
W
A
°C
Vrms
μm
N·m
g
Note. 8: The base plate flatness measurement points are in the following figure.
Heat sink side
Y
+
–
+ convex
：
–
concave
：
X
–
+
Heat sink side
Jan. 2009
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
