MITSUBISHI IGBT MODULES
CM150DY-12NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
7
5
3
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
7
5
3
2
Single Pulse
T
C
= 25°C
10
–1
7
5
3
2
10
–1
7
5
3
2
10
2
7
5
3
2
I
rr
t
rr
10
1 1
10
2
3
5 7
10
2
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 4.2Ω
T
j
= 25°C
Inductive load
2 3
5 7
10
3
IGBT part:
10
–2
Per unit base =
7
5
R
th(j–c)
= 0.21°C/W
FWDi part:
3
Per unit base =
2
R
th(j–c)
= 0.47°C/W
10
–3
10
–2
7
5
3
2
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
EMITTER CURRENT I
E
(A)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
I
C
= 150A
V
CC
= 200V
16
V
CC
= 300V
12
8
4
0
0
200
400
600
800
1000
GATE CHARGE Q
G
(nC)
Mar.2003
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
