MITSUBISHI IGBT MODULES
CM100RX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
Parameter
(Tj = 25
°
C, unless otherwise specified)
Conditions
V
CE
= V
CES
, V
GE
= 0V
Collector cutoff current
Gate-emitter threshold voltage I
C
= 10mA, V
CE
= 10V
Gate leakage current
±V
GE
= V
GES
, V
CE
= 0V
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
I
C
= 100A, V
GE
= 15V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CC
= 600V, I
C
= 100A
V
GE
=
±15V,
R
G
= 3.0Ω
Inductive load
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
(I
E
= 100A)
I
E
= 100A, V
GE
= 0V
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
V
EC(Note.3)
Emitter-collector voltage
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
I
E
= 100A, V
GE
= 0V
Thermal resistance
per IGBT
(Note. 1)
(Junction to case)
per free wheeling diode
Internal gate resistance
T
C
= 25°C, per switch
External gate resistance
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
500
—
—
—
—
—
5
2.6
2.16
2.5
—
—
0
—
Max.
1
8
0.5
2.6
—
—
17.5
1.5
0.34
—
100
70
300
600
150
—
3.4
—
—
0.20
0.29
—
31
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
I
RRM(Note.3)
Parameter
Conditions
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
250
—
2.6
2.16
2.5
—
—
0
—
Max.
1
8
0.5
2.6
—
—
8.5
0.75
0.17
—
1
3.4
—
—
0.35
0.48
—
62
Unit
mA
V
μA
V
V
CE
= V
CES
, V
GE
= 0V
Collector cutoff current
Gate-emitter threshold voltage I
C
= 5mA, V
CE
= 10V
Gate leakage current
±V
GE
= V
GES
, V
CE
= 0V
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
I
C
= 50A, V
GE
= 15V
I
C
= 50A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 50A, V
GE
= 15V
V
R
= V
RRM
I
F
= 50A
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
nF
nC
mA
V
V
FM(Note.3)
Forward voltage drop
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
I
F
= 50A
per IGBT
Thermal resistance
(Note. 1)
per Clamp diode
(Junction to case)
T
C
= 25°C
Internal gate resistance
External gate resistance
K/W
Ω
Jan. 2009
3
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