MITSUBISHI IGBT MODULES
CM100DY-24A
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c’)
(ratio)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
Single Pulse
7
5
T
C
= 25°C
3
Under the chip
2
10
–1
7
5
3
2
10
–1
7
5
3
2
I
rr
10
2
7
5
3
2
t
rr
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 25°C
Inductive load
2 3
5 7
10
3
10
1 1
10
2
3
5 7
10
2
IGBT part:
10
–2
Per unit base =
7
5
R
th(j–c)
= 0.186K/W
FWDi part:
3
Per unit base =
2
R
th(j–c)
= 0.34K/W
10
–3
10
–2
7
5
3
2
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
EMITTER CURRENT I
E
(A)
TIME (s)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
10
2
7
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
Conditions:
V
CC
= 600V
5
V
GE
=
±15V
3
I
C
= 100A
T
j
= 125°C
2
Inductive load
C snubber at bus
10
1
7
7
5
3
2
SWITCHING LOSS (mJ/pulse)
5
3
2
SWITCHING LOSS (mJ/pulse)
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
10
2
Esw(on)
Esw(off)
10
1
7
5
3
2
10
0 1
10
2
3
5 7
10
2
2
3
5 7
10
3
10
0 0
10
2
3
5 7
10
1
2
3
5 7
10
2
COLLECTOR CURRENT I
C
(A)
GATE RESISTANCE R
G
(Ω)
RECOVERY LOSS vs. I
E
(TYPICAL)
10
2
7
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
10
2
7
RECOVERY LOSS (mJ/pulse)
5
3
2
RECOVERY LOSS (mJ/pulse)
10
1
7
5
3
2
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Err
5
3
2
10
1
7
5
3
2
Conditions:
V
CC
= 600V
V
GE
=
±15V
I
E
= 100A
T
j
= 125°C
Inductive load
C snubber at bus
Err
10
0 1
10
2
3
5 7
10
2
2
3
5 7
10
3
10
0 0
10
2
3
5 7
10
1
2
3
5 7
10
2
EMITTER CURRENT I
E
(A)
GATE RESISTANCE R
G
(Ω)
Feb. 2009
4
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
