MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR6AM
OUTLINE DRAWING
10.5 MAX
Dimensions
in mm
4.5
4
16 MAX
3.2±0.2
1.3
∗
12.5 MIN
3.8 MAX
TYPE
NAME
VOLTAGE
CLASS
1.0
0.8
2.5
2.5
7.0
φ3.6±0.2
0.5
2.6
123
24
1
2
33
4
∗
Measurement point of
case temperature
• I
T (RMS)
........................................................................ 6A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
V5
1
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · washing machine · infrared kotatsu · carpet ·
electric fan,
solenoid drivers, small motor control, copying machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
4.5
Ratings
6
60
15
5
0.5
10
2
–40 ~ +120
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
