MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM-14
OUTLINE DRAWING
10
±
0.3
6.5
±
0.3
3
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
2.6
±
0.2
V
Measurement point of
case temperature
.................................................................. 3A
q
V
DRM
................................................................. 700V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
..................................... 30mA
q
V
iso
.................................................................. 2000V
q
I
T (RMS)
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
TO-220FN
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
14
700
840
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Feb.1999
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
V1.
Gate open.
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
