MITSUBISHI SEMICONDUCTOR TRIAC
BCR20KM
MEDIUM POWER USE
The product guaranteed maximum junction
temperature 150°C (See warning.)
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T = 125°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
j
160
140
120
100
80
160
140
120
100
80
TYPICAL EXAMPLE
= 125°C
TYPICAL EXAMPLE
= 150°C
T
j
Tj
III QUADRANT
I QUADRANT
III QUADRANT
I QUADRANT
60
60
40
40
20
20
0
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104
101 2 3 5 7102 2 3 5 7103 2 3 5 7104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
COMMUTATION CHARACTERISTICS
(T
j
= 125°C)
(T
j
= 150°C)
102
7
102
7
SUPPLY
VOLTAGE
SUPPLY
VOLTAGE
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
TIME
TIME
(di/dt)c
TIME
(di/dt)c
TIME
MAIN CURRENT
MAIN CURRENT
5
5
T
j
= 125°C
T
j
= 150°C
MAIN
VOLTAGE
MAIN
VOLTAGE
3
2
TIME
I
T
= 4A
3
2
TIME
VD
I
T
= 4A
VD
(dv/dt)c
(dv/dt)c
τ = 500µs
= 200V
τ = 500µs
= 200V
f = 3Hz
VD
VD
f = 3Hz
101
101
I QUADRANT
7
5
7
5
MINIMUM
CHARAC-
TERISTICS
VALUE
III QUADRANT
III QUADRANT
3
2
3
2
MINIMUM
CHARAC-
TERISTICS
VALUE
I QUADRANT
100
7
100
7
3
5
7
101
2
3
5
7
102
3
5
7
101
2
3
5
7
102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
3
2
I
RGT I
I
RGT III
I
FGT I
102
7
5
3
2
101
100
2
3
5
7
101
2
3
5 7
102
GATE TRIGGER PULSE WIDTH (µs)
Mar. 2002
MITSUBISHI [ Mitsubishi Group ]
