MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20KM
OUTLINE DRAWING
10
±
0.3
6.5
±
0.3
3
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
➀➁➂
�½
Measurement point of
case temperature
................................................................ 20A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
.................................... 20mA
q
V
iso
................................................................. 2000V
q
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
q
I
T (RMS)
➁
➀
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂ ➂
GATE TERMINAL
TO-220FN
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
�½1
Non-repetitive peak off-state
voltage
�½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=85°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2.6
±
0.2
Ratings
20
200
167
5
0.5
10
2
–40 ~ +125
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Mar. 2002
Typical value
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
–40 ~ +125
2.0
2000
�½1.
Gate open.
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
