MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR16B
2-φ3.2 MIN
20 MAX
Dimensions
in mm
BCR16C
2-φ3.2 MIN
BCR16E
5.3 MAX
20 MAX
21 MAX
Feb.1999
22 MAX
1
3
23±0.2
33 MAX
(16.2)
1
φ2.5
MIN
φ2.0
MIN
16 MAX
14
2
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
3
φ2.0
MIN
15.5 MAX
1
3
φ2.0
MIN
10 MAX 16 MAX
1.9 MAX
(φ16)
23±0.2
φ33
MAX
2
8.5 MAX
3 MIN
21 MAX
1
φ2.0
MIN
1.8
MAX
10 MAX
1.8 MAX
8 MAX
20.5 MAX
φ8.7
MAX
φ8.7
MAX
3
φ8.7
MAX
2
M6×1.0
2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
3
7 T
C
= 25°C
5 T
b
= 25°C
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
10
1
7
5
3 V
GT
= 1.5V
2
10
0
7
5
3
2
P
GM
= 5.0W
I
GM
= 2A
GATE TRIGGER CURRENT • VOLTAGE (T
j
= t°C)
GATE TRIGGER CURRENT • VOLTAGE (T
j
= 25°C)
3
2 V
GM
= 10V
P
G(AV)
= 0.5W
100 (%)
GATE CHARACTERISTICS
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
TEST PROCEDURE
Ι, ΙΙ
AND
ΙΙΙ
180
160
140
120
100
80
60 GATE TRIGGER
VOLTAGE
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
