MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
OUTLINE DRAWING
Dimensions
in mm
3
φ2.0
MIN
1
φ2.0
MIN
14 MAX
3
1
φ8.7
MAX
2
2
φ11.1
MAX
• I
T (RMS)
...................................................................... 16A
• V
DRM
..............................................................400V/500V
• I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
BCR16A
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
600
10
500
700
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR16A, B, C
BCR16E
T
c
=99°C
T
b
=71°C
3 MAX
6.5 MAX
Unit
A
A
A
2
s
W
W
V
A
°C
16
5
10
2
Ratings
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
170
121
0.5
–20 ~ +125
V1.
Gate open.
Feb.1999
19 MAX
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
