MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
BCR10UM
OUTLINE DRAWING
Dimensions
in mm
2.8
±
0.2
10.2
4.5
1.27
15.5
V
φ3.8 ±
0.2
13.0
MIN
4.2
MAX
TYPE
NAME
VOLTAGE
CLASS
1.4
0.8
2.54
0.6
2.6
±
0.4
2.54
V
Measurement point of
¡I
T (RMS)
...................................................................... 10A
¡V
DRM
..............................................................400V/600V
¡I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 15mA
¡V
iso
........................................................................ 1500V
APPLICATION
Light dimmer
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
TO-220
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction,
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
T
c
=93°C
V3
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.3
1500
4.5
case temperature
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
V1.
Gate open.
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
