SP5769
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CHARGE PUMP
CRYSTAL CAP
CRYSTAL
DRIVE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
CHARGE PUMP
CRYSTAL CAP
CRYSTAL
DRIVE
V
EE
V
EE
RF INPUT
RFINPUT
RF INPUT
RFINPUT
SDA
SP
5769
SDA
SP
5769
SCL
V
CC
SCL
V
CC
PORT P3/LOGLEV
PORT P2
REF/COMP
ADDRESS
PORTP0
PORT P3/LOGLEV
PORT P2
REF/COMP
ADDRESS
PORTP0
PORT P1
PORT P1
MP16
QP16
Figure 2 Pin connections - top view
Electrical Characteristics
Test conditions (unless otherwise stated): TAMB = 240°C to 180°C, VCC = 4·5V to 5·5V. These characteristics are
guaranteed by either production test or design. They apply within the specified ambient temperature and supply
voltage ranges unless otherwise stated.
Value
Characteristic
Supply current
Pin
Conditions
Units
Typ. Max.
Min.
12
20
mA
25
RF input
13,14
Input voltage
100
40
mVrms
mVrms
300
300
100MHz to 200MHz
200MHz to 3GHz
See Figure 4
Input impedance
SDA, SCL
4,5
3
2·3
0
V
V
V
5V I2C logic selected
3·3V I2C logic selected
5V I2C logic selected
3·3V I2C logic selected
Input voltage = VCC
Input voltage = VEE
VCC = VEE
Input high voltage
5·5
5·5
1·5
1
10
210
10
Input low voltage
0
V
Input high current
Input low current
Leakage current
Input hysteresis
SDA output voltage
µA
µA
µA
V
V
V
0·4
4
5
ISINK = 3mA
ISINK = 6mA
0·4
0·6
400
SCL clock rate
kHz
Charge pump
Output current
Output leakage
Drive output current
Crystal frequency
External reference
Input frequency
1
1
16
2,3
3
See Table 6, VPIN1 = 2V
VPIN1 = 2V, VCC = 15·0V, TAMB = 25°C
VPIN16 = 0·7V
63
nA
mA
MHz
610
0·5
2
20
See Figure 5 for application
2
0·2
MHz
Vp-p
Sinewave coupled via 10nF blocking capacitor
Sinewave coupled via 10nF blocking capacitor
AC coupled, see Note 2
20
0·5
Drive level
Buffered REF/COMP
Output amplitude
Output impedance
Comparison frequency
Equivalent phase noise at
phase detector
11
0·35
250
Vp-p 0·0625 to 20MHz
Ω
MHz
Enabled by bit RE = 1
4
2148
dBc/Hz SSB, within loop bandwidth, all comparison
frequencies
RF division ratio
240
32767
Reference division ratio
See Table 1
cont…
2