Monolithic InGaP HBT MMIC Amplifier
Electrical Specifications at 25°C and 65mA, unless noted
Parameter
Min.
Typ.
Max.
ERA-5SM+
Units
Cpk
Frequency Range*
Gain
f=0.1GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=0.1GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=0.1 GHz
f=2 GHz
f=4 GHz
f=0.1 GHz
f=2 GHz
f=4 GHz
f=2 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=4 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=4 GHz
f=0.1GHz
f=2 GHz
f=4 GHz
f=2 GHz
DC
19
16
12
20.2
19.5
17.6
15.6
14
.0025
.0034
.0043
.0052
.0065
21
23
21
30
26
17
19
16.5
16.5
15.5
22
18.4
18.4
17
12.5
19.5
18.5
18
30
30
26
33
33
30
26
3.5
3.5
3.5
90
65
4.5
4.9
-3.2
6.9
4
22
19
16
.005
.007
.0085
.0105
.013
GHz
dB
>1.5
Magnitude of Gain Variation versus Temperature
(values are negative)
dB/°C
Input Return Loss
dB
Output Return Loss
dB
Reverse Isolation
Output Power @1 dB compression
dB
dBm
>1.5
Saturated Output Power
(at 3dB compression)
Output IP3
dBm
dBm
>1.5
Noise Figure
4.5
4.5
4.5
dB
>1.5
Group Delay
Recommended Device Operating Current
Device Operating Voltage
Device Voltage Variation vs. Temperature at 65mA
Device Voltage Variation vs. Current at 25°C
psec
mA
5.3
V
mV/°C
mV/mA
°C/W
>1.5
133
Thermal Resistance, junction-to-case
1
*
Guaranteed specification DC-4 GHz. Low frequency cut off determined by external coupling capacitors.
Absolute Maximum Ratings
Parameter
Operating Temperature*
Storage Temperature
Operating Current
Power Dissipation
Input Power
Ratings
-45°C to 85°C
-65°C to 150°C
85mA
451mW
13 dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1
Case is defined as ground leads.
*Based on typical case temperature rise 10°C above ambient.
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RF/IF MICROWAVE COMPONENTS