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XM1001-BD-000V 参数 Datasheet PDF下载

XM1001-BD-000V图片预览
型号: XM1001-BD-000V
PDF下载: 下载PDF文件 查看货源
内容描述: 12.0-40.0 GHz的砷化镓MMIC镜像抑制混频器 [12.0-40.0 GHz GaAs MMIC Image Reject Mixer]
分类和应用: 射频和微波射频混频器微波混频器
文件页数/大小: 9 页 / 329 K
品牌: MIMIX [ MIMIX BROADBAND ]
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12.0-40.0 GHz GaAs MMIC  
Image Reject Mixer  
September 2007 - Rev 04-Sep-07  
M1001-BD  
App Note [1] Biasing - As shown in the bonding diagram, the pHEMT mixer devices are operated using a  
separate gate voltage Vg1. Set Vg1=-0.5V for optimum conversion loss performance.  
App Note [2] Bias Arrangement - Each DC pad (Vg1) needs to have DC bypass capacitance (~100-200 pF) as  
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
App Note [3] USB/LSB Selection -  
For Upper Side Band Operation (USB):  
With IF1 and IF2 connected to the  
LSB  
USB  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port. The input port must be  
loaded with 50 ohms.  
For Lower Side Band Operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port. The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
Note:  
The coupled port can be used as an alternate  
input but the port location of the Coupled and  
Direct ports reverse.  
An alternate method of Selection of USB or LSB:  
LSB  
In Phase Combiner  
-90o  
USB  
In Phase Combiner  
-90o  
IF2  
IF1  
IF2  
IF1  
Page 8 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.