0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
October 2007 - Rev 25-Oct-07
CFS0103-SB
Electrical Characteristics
Parameters
Ta=25ºC, Typical device RF parameters measured in test system.
Test Conditions
Min
Typ
Max
Units
Saturated Drain Current1
Pinch-off Voltage 1
No RF, Quiescent Bias Current
Transconductance1
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure (optimized in a fixed
tuned system)
Associated Gain 2
Output Third Order Intercept Point
1 dB Gain Compression Point 2
Vds=3V, Vgs=0V
Vds=1.5V, Ids=10% of Idss
Vgs=0.35V, Vds=3V
Vds=2.5V. Gm=Idss/Vp
Vgd = 9
Vgd=Vgs= -4V
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=40mA
50
-0.8
75
70
-0.65
30
110
10
0.3
0.3
0.3
0.3
0.45
0.4
0.4
0.4
19.7
20.8
21.1
22.4
18
15.5
15.7
18
16
21
21.5
26.5
18
22
26
29
10
11.5
15.5
16
10
11.5
15.5
16
100
-0.5
150
150
0.9
15
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Notes:
1. Guaranteed at wafer probe.
2. Measurements obtained at fixed tuned system.
Absolute Maximum Ratings
1
Parameter
Rating
Parameter
Rating
Parameter
Rating
Drain-Source Voltage 2
Gate-Source Voltage 2
Gate-Drain Voltage 2
+5.5 V
-5.0 V
-5.0 V
Drain Current 2
RF Input Power
Idss 3 A
17 dBm
Channel Temperature
Storage Temperature
Thermal Resistance
+175ºC
-65ºC to +160ºC
170ºC/W
Total Pwr Dissipation 560 mW
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
