2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 01-May-06
CMM1110
App Note [1] Biasing
- As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd1,2=8V, I
TOTAL
=70mA. Additionally there are six total source resistors on chip. The three resistors on the input stage
are 15, 20 and 32 Ohms. The three resistors on the output stage are 15, 20 and 32 Ohms. One of these must be bonded to ground for each
amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow additional
performance adjustment.
App Note [2] Bias Arrangement
- Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
(Thermal Resistance (Rth) is 60.0ºC/W)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions:
Vd1,2=8.0V, I
TOTAL
=70 mA
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 7
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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