2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
May 2007 - Rev 01-May-07
CMM1110-BD
App Note [1] Biasing
- As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd(1,2)=8V, Id(total)=70mA. Additionally there are six total source resistors on chip. The three resistors on the input
stage are 15, 20 and 32 Ohms. The three resistors on the output stage are 15, 20 and 32 Ohms. One of these must be bonded to ground for
each amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow additional
performance adjustment.
App Note [2] Bias Arrangement
- Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
CMM1110-BD Vd=8.0 V, Id=70 mA
1.0E+09
1.00E+00
CMM1110-BD Vd=8.0 V, Id=70 mA
1.0E+08
MTTF (hours)
1.00E-01
1.0E+07
FITS
1.00E-02
1.00E-03
1.0E+06
1.0E+05
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
CMM1110-BD Vd=8.0 V, Id=70 mA
160
150
140
Tch (deg C)
130
120
110
100
90
80
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
