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CMM0014-BD-000V 参数 Datasheet PDF下载

CMM0014-BD-000V图片预览
型号: CMM0014-BD-000V
PDF下载: 下载PDF文件 查看货源
内容描述: 2.0-22.0 GHz的砷化镓MMIC功率放大器 [2.0-22.0 GHz GaAs MMIC Power Amplifier]
分类和应用: 射频和微波射频放大器微波放大器功率放大器
文件页数/大小: 6 页 / 199 K
品牌: MIMIX [ MIMIX BROADBAND ]
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2.0-22.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 26-Apr-07
CMM0014-BD
Chip Device Layout
Features
Ultra Wide Band Power Amplifier
Compact Size/Self Bias Architecture
11.5 dB Small Signal Gain
+24.0 dBm P1dB Compression Point
+35.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs
MMIC power amplifier has a small signal gain of 11.5
dB with a +24.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
350 mA
+20.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=8.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
15.0
10.0
11.5
+/-0.5
40.0
+24.0
+35.0
+25.0
+8.0
300
Max.
22.0
-
-
-
-
-
-
-
-
+8.5
340
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.