0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
May 2006 - Rev 23-May-06
CFS0303-SB
Typical Performance
OIP3 and P
1dB
vs. Bias at 2GHz
35
OIP3
30
30
OIP3
1,2
35
OIP3 and P
1dB
vs. I
DSQ
at 1GHz
1,2
25
OIP3, P
1dB
(dBm)
OIP3, P
1dB
(dBm)
25
20
20
15
P
1dB
10
4V
3V
5
2V
0
0
10
20
30
I
DSQ
(mA)
40
50
60
15
P
1dB
10
4V
3V
2V
0
0
10
20
30
I
DSQ
(mA)
40
50
60
5
NF and Ga vs. Bias at 2GHz
1.6
2
22
1.6
NF and Ga vs. Bias at 1GHz
2
22
1.4
?
3V
?
2V
?
4V
20
??
1.4
20
Ga
??
1.2
18
1.2
18
1.0
NFmin(dB)
NFmin(dB)
Ga
16
Ga(dB)
1.0
?
2V
?
3V
?
4V
16
Ga(dB)
0.8
14
0.8
14
??
0.6
12
0.6
12
0.4
10
0.4
10
NFmin
0.2
8
0.2
NFmin
8
0
0
0
10
20
30
IDSQ(mA)
40
50
60
?
6
?
6
0
10
20
IDSQ(mA)
30
40
50
60
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise
as P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 17
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
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