CFK2162-P5
Product Specifications
July 1997
(1 of 4)
Features
t
High Gain
t
+34 dBm Power Output
t
Proprietary Power FET Process
t
>45% Linear Power Added Efficiency
t
+29 dBm with 30 dBc Third Order Products
t
Surface Mount SO-8 Power Package
Applications
t
ISM Band Base Stations and Terminals
t
PCS/PCN Base Stations and Terminals
t
Wireless Local Loop
Description
The CFK2162-P5 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+34 dBm. The device is easily matched and provides excellent
2.3 to 2.5 GHz
+34 dBm Power GaAs FET
Package Diagram
G GND
GND G
1
2
3
4
Back Plane
is Source
8
7
6
5
D GND
GND D
linearity at 2 Watts. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
Specifications
(TA = 25°C)
The following specifications are
guaranteed at room temperature in Celeritek test fixture at 2.5 GHz.
Parameters
Conditions
Min
Typ
Max
Units
Absolute Maximum Ratings
Parameter
Symbol
Rating
Vd = 8V, Id = 800 mA (Quiescent)
P-1dB
SSG
3rd Order
Products
(1)
Efficiency
@ P1dB
Vd = 5V, Id = 350 mA (Quiescent)
P-1dB
SSG
Vd = 5V, Id = 1200 mA (Quiescent)
P-1dB
SSG
33.0 34.0
11.0 12.0
26
—
—
—
30
40
30.0
9.0
—
—
—
—
—
—
dBm
dB
dBc
%
dBm
dB
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Channel Temperature
Storage Temperature
VDS
VGS
IDS
PT
TCH
TSTG
12V (3)
-5V
Idss
10W
175°C
-65°C to +175°C
SO-8 Power Package Physical Dimensions
—
—
32.5
10.0
—
—
dBm
dB
Parameters
Conditions
Min
Typ
Max
Units
gm
Idss
Vp
BVGD
(3)
Θ
JL
(2)
Vds = 2.0V, Vgs = 0V
Vds = 2.0V, Vgs = 0V
Vds = 3.0V, Ids = 65 mA
Igd = 6.5 mA
@150°C TCH
—
—
—
18
—
1700
2.8
-1.8
20
10
—
—
—
—
mS
A
Volts
Volts
°C/W
Notes:
1. Sum to two tones with 1 MHz spacing = 29 dBm.
2. See thermal considerations information on page 4.
3. Max (+Vd) and (-Vg) under linear operation. Max potential difference
across the device in RF compression (2Vd + |-Vg|) not to exceed the mini-
mum breakdown voltage (Vbr) of +18V.
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
MIMIX [ MIMIX BROADBAND ]
