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CFK2062-P5 参数 Datasheet PDF下载

CFK2062-P5图片预览
型号: CFK2062-P5
PDF下载: 下载PDF文件 查看货源
内容描述: 2.3至2.5 GHz +30 dBm的功率GaAs FET [2.3 to 2.5 GHz + 30 dBm Power GaAs FET]
分类和应用: 射频和微波射频放大器微波放大器
文件页数/大小: 5 页 / 254 K
品牌: MIMIX [ MIMIX BROADBAND ]
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CFK2062-P5
Product Specifications
July 1997
(1 of 4)
Features
t
High Gain
t
+30 dBm Power Output
t
Proprietary Power FET Process
t
>40% Linear Power Added Efficiency
t
Surface Mount SO-8 Power Package
Applications
t
ISM Band Base Stations and Terminals
t
RF ID/POS Base Stations
t
Wireless Local Loop
Description
The CFK2062-P5 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+30 dBm. The device is easily matched and provides excellent
2.3 to 2.5 GHz
+30 dBm Power GaAs FET
Package Diagram
G GND
GND G
1
2
3
4
Back Plane
is Source
8
7
6
5
D GND
GND D
linearity at 1 Watt. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
Specifications
(TA = 25°C)
The following specifications are
guaranteed at room temperature in Celeritek test fixture at 2.45 GHz.
Parameters
Conditions
Min
Typ
Max
Units
SO-8 Power Package Physical Dimensions
Vd = 8V, Id = 400 mA (Quiescent)
P-1dB
SSG
3rd Order
Products
(1)
Efficiency
@ P1dB
Vd = 5V, Id = 600 mA (Quiescent)
P-1dB
SSG
Parameters
Conditions
30.0 31.0
12.0 13.0
Min
Max
dBm
dB
dBc
%
dBm
dB
Units
30
40
30.5
12.0
Typ
gm
Idss
Vp
BVGD
Θ
JL
(2)
Vds = 2.0V, Vgs = 0V
Vds = 2.0V, Vgs = 0V
Vds = 3.0V, Ids = 25 mA
Igd = 2.5 mA
@150°C TCH
15
650
1.4
-1.8
17
12
mS
A
Volts
Volts
°C/W
Absolute Maximum Ratings
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Channel Temperature
Storage Temperature
VDS
VGS
IDS
PT
TCH
TSTG
10V (3)
-5V
Idss
6W
175°C
-65°C to +175°C
Notes:
1. Sum to two tones with 1 MHz spacing = 25 dBm.
2. See thermal considerations information on page 4.
3. Maximum potential difference across the device (Vd + Vg) cannot
exceed 12V.
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095