GaAs MESFET Transistor
July 2008 - Rev 15-Jul-08
CF003-01
Features
High Gain: 8 dB at 12 GHz
P1dB Power: 22 dBm
Wafer Qualification Procedure
Customer Wafer Selection Available
General Description
Mimix CF003-01 GaAs-based transistor is a 600 um gate
width, sub-half-micron gate length GaAs device with Silicon
Nitride passivation. The CF003-01 provides high gain and
medium output power up to 26 GHz. It is suitable for
general purpose and driver amplifier applications with up
to +22 dBm power from a single FET. The CF003-01 is
available in chip form and is suitable for airborne,
shipboard and ground-based equipment. The devices are
100% DC tested and every wafer is qualified based on
sample RF and reliability testing. Screening includes
MIL-STD-750 Class B, Class S and commercial screening.
These devices are also available in packaged form. Please
consult the CFB0301-B, CFA0301-A datasheets or contact
the factory for further information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
