GaAs Pseudomorphic HEMT Transistor
April 2008 - Rev 03-Apr-08
CF001-03
Features
High Gain: Usable to 44 GHz
Low Noise Figure 0.8 dB @ 12 GHz
Wafer Qualification Procedure
Customer Wafer Selection Available
General Description
Mimix CF001-03 GaAs-based transistor is a 300 um gate
width, sub-half-micron gate length GaAs device with Silicon
Nitride passivation. The CF001-03 is suitable for narrow and
wide band low noise and high gain amplifiers up to 40 GHz.
The CF001-03 is available in chip form and is suitable for
airborne, shipboard and ground-based equipment. The
devices are 100% DC tested and every wafer is qualified
based on sample RF and reliability testing. Screening
includes MIL-STD-750 Class B, Class S and commercial
screening. These devices are also available in packaged
form. Please consult the CFS0103-SB, CFB0103-B,
CFA0103-A datasheets or contact the factory for further
information.
CF001-03
Expitaxial
1.2
8.5
9.5
14.0
10.5
7.0
1.8
12.0
17.0
75
30
60
120
-2.5
-0.5 -1.3
-5.5 -8.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
