GaAs MESFET Transistor
March 2008 - Rev 15-Mar-08
CF001-01
Features
High Gain: Usable to 44 GHz
P1dB Power: 21 dBm
Wfer Qualification Procedure
Customer Wafer Selection Available
General Description
Mimix CF001-01 GaAs-based transistor is a 300 um gate
width, sub-half-micron gate length GaAs device with Silicon
Nitride passivation. The CF001-01 provides high gain up to
26 GHz. It is suitable for general purpose and driver
amplifier applications with up to +21 dBm power from a
single FET. This device can also be used in oscillator
applications. The CF001-01 is available in chip form and is
suitable for airborne, shipboard and ground-based
equipment. The devices are 100% DC tested and every
wafer is qualified based on sample RF and reliability testing.
Screening includes MIL-STD-750 Class B, Class S and
commercial screening. These devices are also available in
packaged form. Please consult the CFB0101-B, CFA0101-A
datasheets or contact the factory for further information.
12.0
21.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice.
©2008
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
