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B1007-BD_09 参数 Datasheet PDF下载

B1007-BD_09图片预览
型号: B1007-BD_09
PDF下载: 下载PDF文件 查看货源
内容描述: 4.0-11.0 GHz的砷化镓MMIC [4.0-11.0 GHz GaAs MMIC]
分类和应用:
文件页数/大小: 9 页 / 260 K
品牌: MIMIX [ MIMIX BROADBAND ]
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4.0-11.0 GHz GaAs MMIC
Buffer Amplifier
October 2009 - Rev 10-Oct-09
B1007-BD
App Note [1] Biasing -
The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=90 mA (Vg2 at approximately -0.5V and Vg1 left open). It is also recommended to use active biasing to control
the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also,
make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd and Vg1,2) needs to
have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
1.0E+16
1.0E+15
1.0E+14
1.0E+13
XB1007-BD: MTTF hours vs. Backside Temperature
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
MTTF (hours)
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
20
30
40
50
60
70
80
90
100
110
120
Backside Temp (ºC)
220
200
180
XB1007-BD: Tch (max) vs. Backside Temperature
Tch_max (ºC)
160
140
120
100
80
60
40
20
30
40
50
60
70
80
90
100
110
120
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
Backside Temp (ºC)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 9
Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.