11.0-17.0 GHz GaAs MMIC
Receiver
December 2005 - Rev 30-Dec-05
Features
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF)
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Third Order Intercept (IIP3)
1
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd3)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3)
Gate Bias Voltage (Vg4) Mixer, Doubler
Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)
Units
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
VDC
VDC
mA
mA
Min.
11.0
9.0
DC
-
-
-
-
-
-
-
-
-
-1.2
-1.2
-1.2
-
-
Typ.
-
-
2.0
15.0
13.5
+3.0
20.0
2.2
40.0/40.0
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du
Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise
figure of 2.2 dB and 20.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO buffer amplifer. The image
reject mixer eliminates the need for a bandpass filter after the LNA to
remove thermal noise at the image frequency. I and Q mixer outputs
are provided and an external 90 degree hybrid is required to select the
desired sideband. This MMIC uses Mimix Broadband’s 0.15
µm
GaAs
PHEMT device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
General Description
Supply Voltage (Vd)
Supply Current (Id1), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
ct
+4.0
+3.0
+5.0
-0.3
-0.1
-0.5
80
100
Absolute Maximum Ratings
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(1) Measured using constant current.
Pr
e-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
io
n
+6.0 VDC
250, 200 mA
+0.3 VDC
+17 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
Fully Integrated Design
2.2 dB Noise Figure
13.5 dB Conversion Gain
20 dB Image Rejection
+4 dBm IIP3
+3 dBm LO drive Level
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
14REC0607
Max.
17.0
19.0
TBD
-
-
-
-
-
-
-
+6.0
+6.0
+0.1
+0.1
+0.1
200
150
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