4N47A
Mii
4N48A JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
OPTOELECTRONIC PRODUCTS
DIVISION
4N49A
Features:
Applications:
•
•
High Reliability
•
•
•
•
•
Eliminate ground loops
Base lead provided for conventional transistor
biasing
Level shifting
Line receiver
•
•
•
Rugged package
Switching power supplies
Motor control
High gain, high voltage transistor
+1kV electrical isolation
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-
19500 JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................1kV
Emitter-Collector Voltage............................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V
Collector-Base Voltage.............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)......................................40mA
Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ...............................................................................1A
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds)................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions
Schematic Diagram
6
L E A D S
0 .0 1 6 Ø [0 .4 1 ]
0 .0 1 9 Ø [0 .4 8 ]
0 .0 4 0 [1 .0 2 ]
M A X .
A
K
C
5
3
5
6
3
7
0 .3 0 5 [7 .7 5 ]
0 .3 3 5 [8 .5 1 ]
0 .0 4 5 [1 .1 4 ]
0 .0 2 9 [0 .7 3 ]
2
0 .0 2 2 Ø [5 .0 8 ]
1
E
B
0 .5 0 0 [1 2 .7 0 ]
M IN .
1
2
4 5 °
0 .1 5 5 [3 .9 4 ]
0 .1 8 5 [4 .7 0 ]
0 .0 3 4 [0 .8 6 4 ]
0 .0 2 8 [0 .7 1 1 ]
7
N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S (M IL L IM E T E R S )
NOTE: COLLECTOR IS ISOLATED FROM CASE
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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MII [ Micropac Industries ]
