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61090-101 参数 Datasheet PDF下载

61090-101图片预览
型号: 61090-101
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装( NPN )通用晶体管 [SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 84 K
品牌: MII [ Micropac Industries ]
 浏览型号61090-101的Datasheet PDF文件第1页  
61090  
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB)  
ELECTRICAL CHARACTERISTICS  
TA = 25°C unless otherwise specified.  
PARAMETER  
SYMBOL  
MIN  
MAX  
UNITS  
TEST CONDITIONS  
NOTE  
Collector-Base Breakdown Voltage  
75  
V
BV  
I
= 10µA, I = 0  
CBO  
C E  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
50  
6
V
V
nA  
BV  
BV  
I
C
I
= 10mA, I = 0µA  
CEO  
EBO  
B
= 0, I = 10µA  
E
C
10  
10  
I
V = 60V, I = 0  
CB E  
CBO  
µA  
V
= 60V, I = 0, T = 150°C  
CB  
E
A
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
50  
10  
nA  
nA  
I
V
= 50V  
CES  
CE  
I
V
= 4.0V, I =0  
EB C  
EBO  
50  
75  
-
-
-
-
-
-
h
fe1  
h
fe2  
h
fe3  
h
fe4  
h
fe5  
h
fe6  
V
= 10V, I = 0.1mA  
C
CE  
325  
300  
V
= 10V, I =1mA  
C
CE  
Forward-Current Transfer Ratio  
100  
100  
30  
V
= 10V, I =10mA  
C
CE  
1
1
V
CE  
V
CE  
= 10V, I = 150mA  
C
= 10V, I = 500mA  
C
35  
V
CE  
= 10V, I = 10mA @ -55°C  
C
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.30  
V
1
I
= 150mA, I = 15mA  
B
V
V
C
CE (SAT)  
1.0  
V
V
1
1
I
C
= 500mA, I = 50mA  
B
0.6  
1.20  
I
C
= 150mA, I = 15mA  
B
BE (SAT)  
2.0  
V
1
I
C
= 500mA I = 50mA  
B
SMALL-SIGNAL CHARACTERISTICS  
Small Signal Forward Current Transfer Ratio  
50  
2.5  
-
-
h
h
V
= 10V, I = 1mA, f = 1kHz  
fe  
fe  
CE C  
Small Signal Forward Current Transfer Ratio  
V
CE  
= 20V, I = 20mA,  
C
f = 100kHz  
Open Circuit Output Capacitance  
Input Capacitance (Output Open Capacitance)  
Turn-On Time  
8
25  
35  
pf  
pf  
ns  
C
OBO  
V
CB  
= 10V, 100kHz, < f < 1 MHz  
= 0.5 V, 100kHz, < f < 1 MHz  
= 30V, I = 150mA,  
CC C  
C
IBO  
V
EB  
t
on  
V
I
= 15mA  
B1  
Turn-Off Time  
300  
ns  
t
off  
V
CC  
I
= 30V, I = 150mA,  
C
= I = 15mA  
B2  
B1  
NOTES:  
1.  
Pulse width < 300µs, duty cycle < 2.0%.  
RECOMMENDED OPERATING CONDITIONS:  
PARAMETER  
SYMBOL  
MIN  
10  
5
MAX  
150  
20  
UNITS  
mA  
V
Bias Voltage-Collector/Emitter  
Collector-Emitter Voltage  
I
V
C
SELECTCIOE N GUIDE  
PART NUMBER  
PART DESCRIPTION  
61090-001  
61090-002  
61090-101  
61090-102  
61090-300  
2N2222AUB PNP transistor, commercial version  
2N2222AUB PNP transistor, JAN level screening  
2N2222AUB PNP transistor, JANTX level screening  
2N2222AUB PNP transistor, JANTXV level screening  
2N2222AUB PNP transistor, JANS level screening  
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918  
www.micropac.com E-MAIL: optosales@micropac.com  
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