欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS29LV016TRGR-70/ET 参数 Datasheet PDF下载

AS29LV016TRGR-70/ET图片预览
型号: AS29LV016TRGR-70/ET
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 1MX16, 70ns, PDSO48, TSOP1-48]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 40 页 / 369 K
品牌: MICROSS [ MICROSS COMPONENTS ]
 浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第2页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第3页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第4页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第5页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第7页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第8页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第9页浏览型号AS29LV016TRGR-70/ET的Datasheet PDF文件第10页  
COTS PEM  
BOOT SECTOR FLASH  
AS29LV016  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the device bus operations, which are initiated through the internal  
command register. The command register itself does not occupy any addressable memory location. The register  
is com-posed of latches that store the commands, along with the address and data information needed to execute  
the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs  
dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require,  
and the resulting output. The following subsections describe each of these operations in further detail.  
Table 1: AS29LV016 Device Bus Operations  
DQ8-DQ15  
DQ0-  
DQ7  
DOUT  
BYTE#  
=VIH  
BYTE#  
=VIL  
Address1  
AIN  
Operation  
CE#  
L
OE#  
L
WE#  
H
RESET#  
DOUT  
Read  
H
H
DQ8-DQ14= High Z,  
DQ15=A-1  
AIN  
DIN  
DIN  
Write  
L
H
L
Standby  
Output Disable  
Reset  
Vcc ± 0.3V  
X
H
X
X
H
X
Vcc ± 0.3V  
X
X
X
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
L
X
H
L
Sector Protect2  
VID  
DIN  
L
H
L
X
X
Sector Address,  
A6=L, A1=H, A0=L  
Sector Unprotect2  
Temporary Sector Unprotect  
Legend:  
VID  
VID  
DIN  
DIN  
L
H
X
L
X
X
Sector Address,  
A6=H, A1=H, A0=L  
AIN  
DIN  
X
X
High-Z  
L= Logic Low = V IL , H=Logic High=V IH , V ID =12.0±0.5V, X=Don't Care, A IN =Address In, D IN = Data In, D OUT =Data Out  
Notes:  
1. Addresses are A19:A0 in word mode (BYTE# = V IH ), A19:A-1 in byte mode (BYTE# = VIL  
)
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector Protection /  
Unprotection on page 11.  
WORD / BYTE CONFIGURATION  
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word  
conguration. If the BYTE# pin is set at logic 1, the device is in word conguration, DQ15–DQ0 are  
active and controlled by CE# and OE#.  
If the BYTE# pin is set at logic 0, the device is in byte conguration, and only data I/O pins DQ0–  
DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and  
the DQ15 pin is used as an input for the LSB (A-1) address function.  
Micross Components reserves the right to change products or specications without notice.  
AS29LV016  
Rev. 2.2 01/10  
6