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AS29LV016TRG-100/ET 参数 Datasheet PDF下载

AS29LV016TRG-100/ET图片预览
型号: AS29LV016TRG-100/ET
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 1MX16, 100ns, PDSO48, TSOP1-48]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 40 页 / 369 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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COTS PEM  
BOOT SECTOR FLASH  
AS29LV016  
STANDBY MODE  
RESET#: HARDWARE RESET PIN  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode,  
current consumption is greatly reduced, and the outputs  
are placed in the high impedance state, independent of  
the OE# input.  
The RESET# pin provides a hardware method of  
resetting the device to reading array data. When the  
system drives the RESET# pin to VIL for at least a period  
of tRP, the device immediately terminates any operation  
in progress, tristates all data output pins, and ignores  
all read/write attempts for the duration of the RESET#  
pulse. The device also resets the internal state machine  
to reading array data. The operation that was interrupted  
should be reinitiated once the device is ready to accept  
another command sequence, to ensure data integrity.  
The device enters the CMOS standby mode when the  
CE# and RESET# pins are both held at VCC ± 0.3 V.  
(Note that this is a more restricted voltage range than  
VIH.) If CE# and RESET# are held at VIH, but not within  
VCC ± 0.3 V, the device will be in the standby mode, but  
the standby current will be greater. The device requires  
standard access time (tCE) for read access when the  
device is in either of these standby modes, before it is  
ready to read data.  
Current is reduced for the duration of the RESET#  
pulse. When RESET# is held at VSS±0.3 V, the device  
draws CMOS standby current (ICC4). If RESET# is held  
at VIL but not within VSS±0.3 V, the standby current will  
be greater.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is  
completed.  
The RESET# pin may be tied to the system reset circuitry.  
A system reset would thus also reset the Flash memory,  
enabling the system to read the boot-up rmware from  
the Flash memory.  
ICC3 and ICC4 represents the standby current specication  
shown in the table in DC Characteristics on page 27.  
If RESET# is asserted during a program or erase  
operation, the RY/BY# pin remains a 0 (busy) until the  
internal reset operation is complete, which requires a  
time of tREADY (during EmbeddedAlgorithms). The system  
can thus monitor RY/BY# to determine whether the reset  
operation is complete. If RESET# is asserted when a  
program or erase operation is not executing (RY/BY#  
pin is 1), the reset operation is completed within a time  
of tREADY (not during Embedded Algorithms). The system  
can read data tRH after the RESET# pin returns to VIH.  
Refer to the tables in AC Characteristics on page 29 for  
RESET# parameters and to Figure 13, on page 30 for  
the timing diagram.  
AUTOMATIC SLEEP MODE  
The automatic sleep mode minimizes Flash device  
energy consumption. The device automatically enables  
this mode when addresses remain stable for tACC + 30 ns.  
The automatic sleep mode is independent of the CE#,  
WE#, and OE# control signals. Standard address access  
timings provide new data when addresses are changed.  
While in sleep mode, output data is latched and always  
available to the system. ICC4 in the DC Characteristics on  
page 27 represents the automatic sleep mode current  
specication.  
Micross Components reserves the right to change products or specications without notice.  
AS29LV016  
Rev. 2.2 01/10  
8