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AS29F010DCG-150/Q 参数 Datasheet PDF下载

AS29F010DCG-150/Q图片预览
型号: AS29F010DCG-150/Q
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128KX8, 150ns, PDSO32, FP-32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 26 页 / 865 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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FLASH  
AS29F010  
non-suspended sectors. The system can determine the status of reverts to the Erase Suspend mode, and is ready for another  
the program operation using the DQ7 or DQ6 status bits, just valid operation. See “Autoselect Command Sequence” for  
as in the standard program operation. See “Write Operation more information.  
Status” for more information.  
The system must write the Erase Resume command  
The system may also write the autoselect command se- (address bits are “don’t care”) to exit the erase suspend mode  
quence when the device is in the Erase Suspend mode. The and continue the sector erase operation. Further writes of the  
device allows reading autoselect codes even at addresses within Resume command are ignored. Another Erase Suspend com-  
erasing sectors, since the codes are not stored in the memory mand can be written after the device has resumed erasing.  
array. When the device exits the autoselect mode, the device  
TABLE 4: Command Denitions  
2,3  
Bus Cycles  
Third  
1
Command Sequence  
First  
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data  
RA RD  
Second  
Fourth  
Fifth  
Sixth  
4
1
1
3
Read  
5
6
XXXX F0  
Reset  
Reset  
555  
AA  
2AA  
55  
555  
F0  
Manufacturer ID  
Device ID  
4
4
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
555  
90  
90  
X00  
X01  
1
20  
7
Autoselect  
(SA)  
X02  
0
8
4
555  
AA  
2AA  
55  
555  
90  
Sector Protect Verify  
1
Program  
Chip Erase  
Sector Erase  
4
6
6
555  
555  
555  
AA  
AA  
AA  
2AA  
2AA  
2AA  
55  
55  
55  
555  
555  
555  
A0  
80  
80  
PA  
555  
555  
PD  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
30  
9
1
1
XXX  
XXX  
B0  
30  
Erase Suspend  
10  
Erase Resume  
LEGEND:  
X = Don’t Care  
RA = Address of the memory location to be read  
RD = Data read from location RA during read operation  
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE\ or CE\ pulse, whichever happens later  
PD = Data to be programmed at location PA. Data latches on the rising edge of WE\ or CE\ pulse, whichever happens rst  
SA = Address of the sector to be veried (in autoselect mode) or erased. Address bits A16-A14 uniquely select any sector.  
NOTES:  
1. See Table 1 for description of bus operations.  
2. All values are in hexadecimal.  
3. Except when reading array or autoselect data, all command bus cycles are write operations.  
4. No unlock or command cycles required when reading array data.  
5. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing  
status data).  
6. The device accepts the three-cycle reset command sequence for backward compatibility.  
7. The fourth cycle of the autoselect command sequence is a read operation.  
8. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information.  
9. The system may read in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only  
during a sector erase operation.  
10. The Erase Resume command is valid only during the Erase Suspend mode.  
AS29F010  
Micross Components reserves the right to change products or specications without notice.  
Rev. 2.6 11/10  
9