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AS27C512-15ECAI 参数 Datasheet PDF下载

AS27C512-15ECAI图片预览
型号: AS27C512-15ECAI
PDF下载: 下载PDF文件 查看货源
内容描述: [UVPROM, 64KX8, 150ns, CMOS, CQCC32, 0.450 X 0.550 INCH, WINDOWED, CERAMIC, LCC-32]
分类和应用: 可编程只读存储器内存集成电路
文件页数/大小: 13 页 / 120 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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UVEPROM
Austin Semiconductor, Inc.
GENERAL DESCRIPTION
The SMJ27C512 is a set of 65536 by 8-bit (524,288-bit),
ultraviolet (UV) light erasable, electrically programmable
read-only memories. These devices are fabricated using
power-saving CMOS technology for high speed and simple
interface with MOS and bipolar circuits. All inputs
(including program data inputs can be driven by Series 54 TTL
circuits without the use of external pullup resistors. Each
output can drive one Series 54 TTL circuit without external
resistors. The data outputs are 3-state for connecting
multiple devices to a common bus. The SMJ27C512 is
pin-compatible with existing 28-pin 512K ROMs and
EPROMs.
Because this EPROM operates from a single 5V supply (in
the read mode), it is ideal for use in microprocessor-based
systems. One other supply (13V) is needed for programming.
All programming signals are TTL level. This device is
programmable by the SNAP! Pulse programming algorithm.
The SNAP! Pulse programming algorithm uses a V
PP
of 13V
and a V
CC
of 6.5V for a nominal programming time of seven
seconds. For programming outside the system, existing
EPROM programmers can be used. Locations may be
programmed singly, in blocks, or at random.
SMJ27C512
AS27C512
FUNCTIONAL BLOCK DIAGRAM*
EPROM 65,536 x 8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
E\
G\ /V
PP
10
9
8
7
6
5
4
3
25
24
21
23
2
26
27
1
20
22
0
A
0
65,535
A
A
A
A
A
A
A
A
11
12
13
15
16
17
18
19
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
15
[PWR DWN]
&
EN
* This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
SMJ27C512/AS27C512
Rev. 2.5 10/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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