SRAM
AS5C512K8
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
DQ8
4,194,304-BIT
MEMORY ARRAY
1024 ROWS X
4096 COLUMNS
A0-A18
DQ1
CE\
OE\
COLUMN DECODER
WE\
*POWER
DOWN
*On the low voltage Data Retention option.
PIN FUNCTIONS
A0 - A18
WE\
Address Inputs
Write Enable
TRUTH TABLE
MODE
STANDBY
READ
NOT SELECTED
WRITE
OE\ CE\ WE\
I/O
HIGH-Z STANDBY
ACTIVE
HIGH-Z ACTIVE
ACTIVE
POWER
CE\
Chip Enable
X
L
H
L
L
L
X
H
H
L
OE\
Output Enable
Q
H
X
I/O0 - I/O7 Data Inputs/Outputs
D
VCC
VSS
NC
Power
X = Don’t Care
Ground
No Connection
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C512K8
Rev. 4.0 2/01
2
MICROSS [ MICROSS COMPONENTS ]
