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5962-9458504H4C 参数 Datasheet PDF下载

5962-9458504H4C图片预览
型号: 5962-9458504H4C
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 128KX32, 150ns, Parallel, CMOS, CPGA66, PGA-66]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 14 页 / 180 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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EEPROM  
AS8E128K32  
1
CAPACITANCE TABLE (VIN = 0V, f = 1 MHz, T = 25oC)  
A
SYMBOL  
CADD  
PARAMETER  
A0 - A16 Capacitance  
MAX  
UNITS  
40  
pF  
pF  
pF  
pF  
COE  
OE\ Capacitance  
40  
10  
12  
CWE, CCE  
CIO  
WE\ and CE\ Capacitance  
I/O 0- I/O 31 Capacitance  
NOTE: 1. This parameter is guaranteed but not tested.  
NOTES: 1. X can be VIL or VIH  
2. Refer to AC Programming Waveforms  
AC TEST CONDITIONS  
TEST SPECIFICATIONS  
Input pulse levels...........................................VSS to 3V  
Input rise and fall times...........................................5ns  
Input timing reference levels.................................1.5V  
Output reference levels.........................................1.5V  
Output load................................................See Figure 1  
Figure 1  
NOTES:  
Vz is programmable from -2V to + 7V.  
IOL and IOH programmable from 0 to 16 mA.  
Vz is typically the midpoint of VOH and VOL.  
IOL and IOH are adjusted to simulate a typical resistive load  
circuit.  
Micross Components reserves the right to change products or specications without notice.  
AS8E128K32  
Rev. 8.1 01/10  
4